uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Morphological Study of Sol-Gel Derived ZnO: In Thin Films
Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, Sofia, Bulgaria.
Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, Sofia, Bulgaria.
Bulgarian Acad Sci, Inst Elect, Sofia, Bulgaria.
Univ Liege, LCIS SUPRATECS, Inst Chem B6, Liege, Belgium.
Show others and affiliations
2017 (English)In: Proceeding of the 2017 40Th International Spring Seminar On Electronics Technology (ISSE), 2017Conference paper, Published paper (Refereed)
Abstract [en]

This work presents morphological, structural and optical studies of ZnO and ZnO:In nanostructured thin films depending on In doping (four different concentrations). XRD study of 600°C annealed ZnO:In films reveals that crystallization strongly depends on indium concentration. The films are crystallized in wurtzite structure and only for the films with highest In addition, two crystal phases are detected wurtzite ZnO and cubic In 2 O 3 . The AFM investigation reveals that the lowest Root Mean Squared Roughness(RMS) is revealed for ZnO:In 0.5 film (15.96 nm) and the roughness increases up to 64.52 nm for ZnO:In 1. Columnar type structures can be observed in the AFM micrographs of the other two films - ZnO:In 2 and ZnO:In 3, as the columns vary in height and size. The effect of the indium doping into ZnO reveals changing of optical transmittance compared to ZnO film. The optical band gap of ZnO:In films, annealed at 600°C is in the range of 3.06-3.27 eV.

Place, publisher, year, edition, pages
2017.
Series
International Spring Seminar on Electronics Technology (ISSE), E-ISSN 2161-2536
National Category
Condensed Matter Physics Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-356256DOI: 10.1109/ISSE.2017.8000965ISI: 000426973000088ISBN: 978-1-5386-0582-0 (electronic)ISBN: 978-1-5386-0583-7 (print)OAI: oai:DiVA.org:uu-356256DiVA, id: diva2:1235935
Conference
40th International Spring Seminar on Electronics Technology (ISSE), 10-14 May, 2017, Sofia, Bulgaria
Available from: 2018-07-30 Created: 2018-07-30 Last updated: 2018-08-20Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Stefanov, Bozhidar I

Search in DiVA

By author/editor
Stefanov, Bozhidar I
By organisation
Solid State Physics
Condensed Matter PhysicsEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 3 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf