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High hole-mobility of rrP3HT in organic field-effect transistors using low-polarity polyurethane gate dielectric
Pontifical Catholic Univ Rio de Janeiro, Dept Phys, Rio De Janeiro, RJ, Brazil.
Pontifical Catholic Univ Rio de Janeiro, Dept Phys, Rio De Janeiro, RJ, Brazil.
Pontifical Catholic Univ Rio de Janeiro, Dept Phys, Rio De Janeiro, RJ, Brazil.
Pontifical Catholic Univ Rio de Janeiro, Dept Phys, Rio De Janeiro, RJ, Brazil.
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2018 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 58, p. 33-37Article in journal (Refereed) Published
Abstract [en]

We report unusually high charge carrier mobilities for regioregular poly(3-hexyltiophene) (rrP3HT) in organic field-effect transistors (OFETs) using polyurethane (PU) as dielectric layer. Our devices display hole mobilities up to 1.37 cm(2)/V in the saturation regime and an ON/OFF current ratio higher than 10(3), operating at voltages as low as -10 V, with a high I-DS current of 1.5 mu A. We assign the measured high mobilities mainly to the low density of randomly-oriented electric dipoles at the semiconductor/dielectric interface, which leads to a narrow energy distribution of the electronic levels available for charge transport in rrP3HT. This is confirmed by experimental and theoretical techniques: (1) temperature-dependent transport measurements for extraction of disorder-induced distribution of electronic levels; (2) density functional theory (DFT) calculations of electric dipole moments of PU; and (3) liquid contact-angle measurements for the dipolar component of dielectric surface tension.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2018. Vol. 58, p. 33-37
Keywords [en]
OFETs, Charge carrier mobility, Organic semiconductor, Poly-(3-hexylthiphene), Polyurethane
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-356608DOI: 10.1016/j.orgel.2018.03.033ISI: 000432557000006OAI: oai:DiVA.org:uu-356608DiVA, id: diva2:1239918
Available from: 2018-08-20 Created: 2018-08-20 Last updated: 2018-08-20Bibliographically approved

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Marchiori, Cleber

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