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Extending the Spectral Responsivity of MoS2 Phototransistors by Incorporating Up-Conversion Microcrystals
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2018 (English)In: Advanced Optical Materials, ISSN 2162-7568, E-ISSN 2195-1071, Vol. 6, no 21, article id 1800660Article in journal (Refereed) Published
Abstract [en]

Layered 2D semiconductors are characterized by unique photoelectric properties and, therefore, constitute a new class of basic building block for next‐generation optoelectronics. However, their wide bandgaps limit the spectral responsivity to a narrow range. Here, a facile approach is demonstrated by integrating β‐NaYF4:Yb3+, Er3+ up‐conversion microcrystals (UCMCs) with monolayer‐MoS2 phototransistors to break this bandgap‐imposed barrier and to drastically extend the responsivity range. In essence, the UCMCs up‐convert a near‐infrared excitation at 980 nm to visible light of photons with energy matching the large bandgap (i.e., 1.8 eV) of monolayer‐MoS2, thereby activating the phototransistor with remarkable photocurrent and minimum interference. This approach leads to preservation of the excellent electrical merits of monolayer‐MoS2 and simultaneous retention of its low dark current and high photoresponsivity to the above‐bandgap lights. Significantly, an enhancement by over 1000 times is achieved for both responsivity and specific detectivity at 980 nm excitation. Moreover, the rate of response is kept identical to that when the MoS2 phototransistor is excited by a visible light. Therefore, integrating with UCMCs can enable the emerging 2D semiconductors of wide bandgap to respond to infrared excitations with high efficacy and without sacrificing their performance in the visible region.

Place, publisher, year, edition, pages
2018. Vol. 6, no 21, article id 1800660
Keywords [en]
molybdenum disulfide, phototransistors, spectral responsivity, up-conversion
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-364771DOI: 10.1002/adom.201800660ISI: 000449767800004OAI: oai:DiVA.org:uu-364771DiVA, id: diva2:1260342
Funder
Swedish Research Council, 621-2014-5591Available from: 2018-11-02 Created: 2018-11-02 Last updated: 2019-06-26Bibliographically approved

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Zhang, YouweiZhang, Shi-Li

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