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Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India.
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India.
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics. Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India.
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2018 (English)In: 2nd International Conference On Condensed Matter And Applied Physics (ICC-2017) / [ed] Shekhawat, MS Bhardwaj, S Suthar, B, American Institute of Physics (AIP), 2018, Vol. 1953, article id UNSP 120077-1Conference paper, Published paper (Refereed)
Abstract [en]

Ma(56)Al(44) (MnAl) thin films of constant thickness (similar to 30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (T-s), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the tau- and beta-MnAl. The highest saturation magnetization (M.$) was found to be 65emu/cc using PPMSVSM in film grown at T-s =500 degrees C. The magnetic ordering was found to get significantly improved by performing post annealing of these as-grwon at 400 degrees C for 1 hr in the presence of out-of-plane magnetic field of similar to 15000e in vacuum. In particular, at room temperature (RT), the Ms got enhanced after magnetic annealing from 65mm/cc to 500 emu/cc in MnAl films grown at T-s=500 degrees C. This sample exhibited a magneto-resistance of similar to 1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAI, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 1953, article id UNSP 120077-1
Series
AIP Conference Proceedings, ISSN 0094-243X ; 1953
Keywords [en]
MnAl binary compound, Magneto-transport, X-ray reflectivity
National Category
Condensed Matter Physics Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-365684DOI: 10.1063/1.5033142ISI: 000436313003188ISBN: 978-0-7354-1648-2 (print)OAI: oai:DiVA.org:uu-365684DiVA, id: diva2:1262719
Conference
2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA
Available from: 2018-11-12 Created: 2018-11-12 Last updated: 2018-11-16Bibliographically approved

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Behera, Nilamani

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