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Improving the electrical conductivity of Siligraphene SiC7 by strain
Mohammed V Univ, Fac Sci, Lab Magnetism & Phys High Energies, Phys Dept, BP 1014, Rabat, Morocco.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and Condensed Matter Physics. Univ Moulay Ismail, Lab Phys Mat & Modelisat Syst LP2MS, Unite Associee CNRST URAC 08, Fac Sci,Phys Dept, BP 11201, Meknes, Morocco.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and Condensed Matter Physics. Univ Moulay Ismail, Lab Phys Mat & Modelisat Syst LP2MS, Unite Associee CNRST URAC 08, Fac Sci,Phys Dept, BP 11201, Meknes, Morocco;Max Planck Inst Phys Complexer Syst, Nothnitzer Str 38, D-01187 Dresden, Germany.
Mohammed V Univ, Fac Sci, Lab Magnetism & Phys High Energies, Phys Dept, BP 1014, Rabat, Morocco.
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2019 (English)In: Optik (Stuttgart), ISSN 0030-4026, E-ISSN 1618-1336, Vol. 177, p. 118-122Article in journal (Refereed) Published
Abstract [en]

Using the 1st principle calculations founded on Density Functional Theory (DFT), we examined the strain effect of band gap (BG) and electrical property (EP) of Siligraphene (g-SiC7) under biaxial strains (Compressive and tensile) using Generalized Gradient Approximation (GGA). We found that the BG of g-SiC7 was decreasing as function of the strain and we remarked that the electrical conductivity of g-SiC7 under biaxial strains become important of 6% for tension effect. For the compressive, we obtained an increase for all compressive applying, but we remarked the higher and lower values are successively -2% and -6%. Last not least, we deduced that it's possible to increase the electrical conductivity of g-SiC7. Also, this material can be used in solar cell applications and for photo-voltaic (PV) applications as a light donor material.

Place, publisher, year, edition, pages
2019. Vol. 177, p. 118-122
Keywords [en]
Semiconductors, Biaxial strains, Siligraphene g-SiC7, Electrical conductivity
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-371032DOI: 10.1016/j.ijleo.2018.08.123ISI: 000450136600015OAI: oai:DiVA.org:uu-371032DiVA, id: diva2:1275585
Available from: 2019-01-07 Created: 2019-01-07 Last updated: 2019-01-07Bibliographically approved

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Ainane, AbdelmajidAhuja, Rajeev

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