uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Concentration of defects responsible for persistent photoconductivity in Cu (In,Ga)Se-2: Dependence on material composition
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland.
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland.
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland.
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland.
Show others and affiliations
2019 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 669, p. 600-604Article in journal (Refereed) Published
Abstract [en]

Persistent photoconductivity (PPC) in thin Cu(In,Ga)Se-2 films is discussed within a model of relaxing defects acting as donors or acceptors depending on their configurational and charge state. The aim of this work is to identify the factors related to technological processes which affect the magnitude of PPC. We established a method of evaluation of the concentration of metastable defects in thin Cu(In,Ga)Se-2 films relating it to the position of the Fermi level in thermodynamic equilibrium and used it to compare and discuss the impact of preparation details on the PPC value. The main result is that deviation from Cu/(Ga + In) stoichiometry does not change the concentration of metastable defects. Post deposition annealing in selenium affects the PPC depending on the presence of sodium during the treatment, while the impact of sodium itself on the metastable defect concentration apparently depends on whether it is present during the Cu(In,Ga)Se-2 deposition process or whether it is supplied during post-deposition treatment.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2019. Vol. 669, p. 600-604
Keywords [en]
Photoconductivity, Copper indium gallium selenide, Thin films, Defects, Metastability
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-372876DOI: 10.1016/j.tsf.2018.11.038ISI: 000453405600087OAI: oai:DiVA.org:uu-372876DiVA, id: diva2:1277274
Conference
European-Materials-Research-Society (EMRS) Spring Meeting / Sympsium A on Thin Film Chalcogenide Photovoltaic Materials (ChalcogenidePV), JUN 18-22, 2018, Strasbourg, FRANCE
Available from: 2019-01-10 Created: 2019-01-10 Last updated: 2019-01-10Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Edoff, Marika

Search in DiVA

By author/editor
Edoff, Marika
By organisation
Solid State Electronics
In the same journal
Thin Solid Films
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 44 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf