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High rate reactive magnetron sputter deposition of titanium oxide
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, ISSN 1, Vol. 92, no 22, 221501- p.Article in journal (Refereed) Published
Abstract [en]

A systematic experimental study of reactive sputtering from substoichiometric targets of TiOx with x ranging from 0 to 1.75 is reported. Experimental results are compared with results from modeling. The developed model describes the observed behavior and explains the origins of the unexpectedly high deposition rate. The behavior is shown to originate from the presence of titanium suboxides at the target surface caused by preferential sputtering of the oxide. The model can be used for optimization of the target composition with respect to the deposition rate and film composition in a stable hysteresis-free reactive sputtering process.

Place, publisher, year, edition, pages
2008. Vol. 92, no 22, 221501- p.
Keyword [en]
SURFACE, TARGET, TIO2
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-87037DOI: 10.1063/1.2938054ISI: 000256527900015OAI: oai:DiVA.org:uu-87037DiVA: diva2:128214
Available from: 2008-12-15 Created: 2008-12-15 Last updated: 2017-12-14Bibliographically approved

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Kubart, TomasMartin, DavidNyberg, TomasBerg, Sören

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