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Mixed sulfur and selenium annealing study of compound-sputtered bilayer Cu2ZnSnS4 / Cu2ZnSnSe4 precursors
Univ Oslo, N-0316 Oslo, Norway.
Univ Oslo, N-0316 Oslo, Norway.
Univ Oslo, N-0316 Oslo, Norway.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2017 (English)In: 2017 IEEE 44Th Photovoltaic Specialist Conference (PVSC), IEEE, 2017, p. 3269-3274Conference paper, Published paper (Refereed)
Abstract [en]

Copper zinc tin sulfide (CZTS) and copper zinc tin selenide (CZTSe) precursor films are compound co-sputtered from metal sulfide and selenide targets. A bilayer precursor consisting of a CZTS-only underlayer and CZTSe-only overlayer is also sputtered. These precursor films are annealed with varying ratios of elemental sulfur and selenium to promote the formation of recrystallized Cu2ZnSn(S, Se) 4 (CZTSSe) solar cell absorber layers with intermediate sulfur-to-selenium ratios Sr=[S]/([S]+[Se]). The films are characterized by scanning electron microscope (SEM) energy dispersive X-ray spectroscopy (EDX), secondary ion mass spectrometry (SIMS), and grazingincidence X-ray diffraction (GIXRD). Selenium-containing precursors produce absorber layers with rougher surfaces, leading to higher short-circuit currents Jsc for some annealing conditions. The Sr value of the crystallized absorber is independent of the ratio of sulfur to selenium in the precursor unless sulfur is deficient in the anneal. Sulfur-selenium distribution in bilayer precursors after mixed S/Se annealing is found to be uniform: neither a step nor significant sulfur-gradient remains. We relate the chalcogen distribution after annealing to the excess of chalcogen in the anneal, and discuss the consequences for back-grading of the band gap by sulfur-selenium variation. Both the thickness and Sr value of the Mo(S, Se) 2 back contact is found to be dependent on the sulfur-selenium ratio of the precursor, with CZTSe precursors producing thicker and more selenium rich back contact layers.

Place, publisher, year, edition, pages
IEEE, 2017. p. 3269-3274
Series
IEEE Photovoltaic Specialists Conference, ISSN 0160-8371
Keywords [en]
CZTSSe, annealing, sulfur-selenium ratio
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-377759DOI: 10.1109/PVSC.2017.8366420ISI: 000455636003059ISBN: 978-1-5090-5605-7 (electronic)OAI: oai:DiVA.org:uu-377759DiVA, id: diva2:1291575
Conference
IEEE 44th Photovoltaic Specialist Conference (PVSC), JUN 25-30, 2017, Washington, DC
Funder
Swedish Foundation for Strategic Research The Research Council of Norway, 243642, 245963/F50Available from: 2019-02-25 Created: 2019-02-25 Last updated: 2019-02-25Bibliographically approved

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Platzer-Björkman, Charlotte

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