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Strain impacts on commensurate bilayer graphene superlattices: Distorted trigonal warping, emergence of bandgap and direct-indirect bandgap transition
Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran.
Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory. Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, Iran.
2019 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 92, p. 228-234Article in journal (Refereed) Published
Abstract [en]

Due to low dimensionality, the controlled stacking of graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the emergence and modulation of bandgaps crucially depends on the stacking of the graphene films, However, to date, only the impact of strain on electronic properties of Bernal and AA-stacked bilayer graphene has been extensively investigated in theoretical studies. Exploiting density functional theory and tight-binding calculation, we investigate the impacts of in-plane strain on two different classes of commensurate twisted bilayer graphene (TBG) which are even/odd under sublattice exchange (SE) parity. We find that the SE odd TBG remains gapless whereas the bandgap increases for the SE even TBG when applying equibiaxial tensile strain. Moreover, we observe that for extremely large mixed strains both investigated TBG superstructures demonstrate direct-indirect bandgap transition.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2019. Vol. 92, p. 228-234
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-380495DOI: 10.1016/j.diamond.2018.12.007ISI: 000461129800029OAI: oai:DiVA.org:uu-380495DiVA, id: diva2:1299793
Available from: 2019-03-28 Created: 2019-03-28 Last updated: 2019-03-28Bibliographically approved

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Parhizgar, Fariborz

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