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High resolution STEM investigation of interface layers in cemented carbides
Sandvik Coromant R&D, S-12680 Stockholm, Sweden.
Sandvik Coromant R&D, S-12680 Stockholm, Sweden.
Sandvik Coromant R&D, S-12680 Stockholm, Sweden.ORCID iD: 0000-0002-9583-9372
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences. Sandvik Coromant R&D, S-12680 Stockholm, Sweden.
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2018 (English)In: INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, ISSN 0263-4368, Vol. 72, p. 135-140Article in journal (Refereed) Published
Abstract [en]

Cemented carbides with sub-micron grain size have increased the need to restrict grain growth during sintering. Commonly used inhibitors like V, Ti, and Cr have been observed to form interface layers in the interfaces between WC grains and the Co binder. Atomistic modeling has predicted the composition and thickness of the interface layers. Earlier, the interface layers have been characterized qualitatively using high resolution transmission electron microscopy (TEM). To get more information about the structure and composition of the interface layers in a Ti containing cemented carbide in this work, Z contrast imaging and spectroscopy using scanning transmission electron microscopy (STEM) have been combined. Elemental maps revealing the structure of the interface layers will be presented.

Place, publisher, year, edition, pages
2018. Vol. 72, p. 135-140
Keywords [en]
STEM, SEM, EDXS, WC, Co, Ti
National Category
Materials Chemistry Ceramics
Identifiers
URN: urn:nbn:se:uu:diva-387465DOI: 10.1016/j.ijrmhm.2017.12.028ISI: 000427209100021OAI: oai:DiVA.org:uu-387465DiVA, id: diva2:1330316
Funder
Swedish Research Council, 2016-04342Swedish Foundation for Strategic Research , RMA 15-0062Available from: 2019-06-25 Created: 2019-06-25 Last updated: 2019-06-25Bibliographically approved

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Norgren, Susanne

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