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Signatures of extended defects in Cu(In,Ga)Se-2 observed using capacitance spectroscopy techniques
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland.
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland.
Univ Nantes, CNRS, IMN UMR 6502, Inst Mat Jean Rouxel, 2 Rue Houssniere,BP 32229, F-44322 Nantes 3, France.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Centre)
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2019 (English)In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 134, p. 58-63Article in journal (Refereed) Published
Abstract [en]

This work concerns the interpretation of defect spectroscopy signals in CuInSe2-and Cu(In,Ga)Se-2-based Schottky junctions and thin films, which are investigated using capacitance- and current-based techniques. Two common signals are distinguished. It is shown here that the activation energies and consequently the emission rates vary between the samples and are strongly correlated with the hole concentration in the material. Models that can account for these changes are discussed. Based on deep-level transient spectroscopy and conductivity measurements, we present arguments for the validity of the existing models and discuss the hypothesis that the observable signals may originate from extended defects in Cu(In,Ga)Se-2.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2019. Vol. 134, p. 58-63
National Category
Condensed Matter Physics
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URN: urn:nbn:se:uu:diva-393716DOI: 10.1016/j.jpcs.2019.05.034ISI: 000481563900009OAI: oai:DiVA.org:uu-393716DiVA, id: diva2:1355590
Available from: 2019-09-30 Created: 2019-09-30 Last updated: 2019-09-30Bibliographically approved

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Szaniawski, PiotrEdoff, Marika

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