uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High-power impulse magnetron sputter deposition of TiBx thin films: Effects of pressure and growth temperature
Messiah Coll, Dept Math Phys & Stat, Mechanicsburg, PA 17055 USA.
Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.
Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
Show others and affiliations
2019 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 169, article id 108884Article in journal (Refereed) Published
Abstract [en]

Titanium boride, TiBx thin films are grown in pure Ar discharges by high-power impulse magnetron sputtering (HiPIMS) from a compound TiB2 target Film compositions are determined by time-of-flight elastic recoil detection analysis and Rutherford backscattering spectrometry as a function of deposition temperature (T-s = 25-900 degrees C) and Ar pressure (p(Ar) = 0.67-2.67 Pa, 5-20 mTorr). For reference, films are also grown by direct current magnetron sputtering (dcMS) under similar conditions. The HiPIMS waveform, average target power P-T, and resulting film compositions are strongly dependent not only on P-Ar, but also on T-s. At high pressures the effect of varying T-s on P-T is minimal, while at lower P-Ar the effect of T-s is more pronounced, due to substrate-temperature-induced gas rarefaction. Films grown by HiPIMS at 0.67 Pa are understoichiometric, with B/Ti = 1.4-1.5, while at 2.67 Pa, B/Ti decreases from 2.4 to 1.4 as T-s increases from 25 to 900 degrees C. dcMS-deposited films are overstoichiometric (B/Ti similar or equal to 3) when grown at low pressures, and near-stoichiometric (B/Ti similar or equal to r 1.9-2.2) for higher P-Ar. All experimental results are explained by differences in the ionization potentials of sputtered Ti and B atoms, together with P-Ar- and T-s-dependent gas-phase scattering.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2019. Vol. 169, article id 108884
Keywords [en]
Titanium diboride, HiPIMS, Ionization, Gas phase transport, Stoichiometry
National Category
Condensed Matter Physics Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-398026DOI: 10.1016/j.vacuum.2019.108884ISI: 000494887000024OAI: oai:DiVA.org:uu-398026DiVA, id: diva2:1375469
Funder
Knut and Alice Wallenberg Foundation, KAW 2015.0043Swedish Foundation for Strategic Research , RIF14-0053Swedish Research Council, 2017-00646_9Available from: 2019-12-05 Created: 2019-12-05 Last updated: 2019-12-05Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Sortica, Mauricio A.

Search in DiVA

By author/editor
Sortica, Mauricio A.
By organisation
Applied Nuclear Physics
In the same journal
Vacuum
Condensed Matter PhysicsMaterials Chemistry

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf