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Germanium Incorporation in Cu2ZnSnS4 and Formation of a Sn–Ge Gradient
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0002-8239-6138
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Solcell)ORCID iD: 0000-0002-7392-4701
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0001-5317-7940
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0002-3461-6036
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2019 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 216, no 22, article id 1900492Article in journal (Refereed) Published
Abstract [en]

Alloying of Cu2ZnSnS4 (CZTS) with Ge can potentially promote grain growth and suppress the formation of Sn‐related defects. Herein, a two‐step fabrication route based on compound co‐sputtering and sulfurization at a high temperature is used to prepare Ge‐incorporated CZTS (Cu2ZnGexSn1 − xS4 [CZGTS]). For Cu2ZnGeS4 (CZGS), films deposited using elemental Ge and binary GeS targets are compared. The recrystallization is shown to be promoted for the absorbers deposited using Ge target, possibly due to lower sulfur content in the precursor suppressing the formation of wurtzite‐like phases during sputtering. The grain growth and crystallinity in CZGTS are slightly improved for x = 0.2 but not for higher concentration of the incorporated Ge. Owing to the composition‐dependent electronic properties, compositionally graded CZGTS films may be beneficial for reducing recombination towards the back contact. Hence, herein, the successful formation of a steep concentration gradient with Ge and Sn is demonstrated by the deposition of a CZGS/CZTS precursor stack followed by sulfurization with varying time periods.

Place, publisher, year, edition, pages
2019. Vol. 216, no 22, article id 1900492
Keywords [en]
chalcogenide, co-sputtering, Cu2ZnSnS4 (CZTS), Sn-Ge gradient, grain boundaries, wurtzite-Cu2ZnGexSn1-xS4
National Category
Condensed Matter Physics Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:uu:diva-401238DOI: 10.1002/pssa.201900492ISI: 000491028600001OAI: oai:DiVA.org:uu-401238DiVA, id: diva2:1383092
Funder
Swedish Foundation for Strategic Research , RMA15-0030Swedish National Infrastructure for Computing (SNIC)Available from: 2020-01-07 Created: 2020-01-07 Last updated: 2020-01-10Bibliographically approved

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The full text will be freely available from 2020-09-13 00:01
Available from 2020-09-13 00:01

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Saini, NishantLarsen, Jes K.Sopiha, Kostiantyn V.Keller, JanPlatzer Björkman, Charlotte

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