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Ultrathin photovoltaic absorbers of SnS; experiments and simulations
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Faculty of Electronics and Informational Technologies, Sumy State University, 2 Rymsky Korsakov Str., 40007 Sumy, Ukraine. (Solar Cell Technology)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Solar Cell Technology)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Solar Cell Technology)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Solar Cell Technology)ORCID iD: C-1405-2008
2019 (English)Conference paper, Oral presentation only (Refereed)
Abstract [en]

Tin monosulfide (SnS) is an earth-abundant and non-toxic compound semiconductor showing promise as an absorber layer in photovoltaic applications, due mainly to its near optimal band gap and high absorption coefficient. Moreover, SnS is an excellent candidate for the realization of ultrathin plasmonic solar cells, since it has a very high optical damping and refractive index, which enables effective interaction between the plasmon resonances of Au nanodot arrays and electron-hole pair generation in nanoscale SnS coatings. To gain further insight into the realization of efficient devices based on this compound, it is of interest to investigate the photovoltaic behavior of ultrathin SnS heterojunctions fabricated with various stack configurations. These may involve different back contact materials, buffer layer compositions and SnS crystal phases, as well as variations of buffer and absorber layer thicknesses. We have investigated Ti, Mo and Al back contacts for heterojunctions based on both cubic (π-) and orthorhombic (o-) SnS, where Mo and Ti show promise for further device development. The tunable wide bandgap semiconductor Zn(O,S) ALD has further been studied as a buffer layer to create a SnS/Zn(O,S) heterojunction. We investigate the relations between the ZnO:ZnS atomic layer deposition (ALD) cycle ratios and chemical composition, and the structural, optical and electronic properties of the resulting thin films. Devices based on p-SnS and a pure ZnO ALD buffer layer is found to yield a higher photocurrent and open circuit voltage than those with o-SnS, although the higher bandgap of the cubic phase would be expected to result in a lower photocurrent. Higher sulfur content in the Zn(O,S) ALD buffer layer leads to a higher open circuit voltage of up to 611 mV, while the short circuit current decreases. This demonstrates a bottleneck in the current-voltage parameters where devices with a good voltage have low current and vice versa. Numerical device simulations are deployed to cast light on this situation and a possible route forward.

Place, publisher, year, edition, pages
2019.
Keywords [en]
ultrathin solar cells, tin monosulfide, atomic layer deposition
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-401289OAI: oai:DiVA.org:uu-401289DiVA, id: diva2:1383259
Conference
E-MRS Spring Meeting 2019
Funder
Swedish Energy Agency, 45409-1Swedish Research Council, 621-2014-5599Available from: 2020-01-07 Created: 2020-01-07 Last updated: 2020-01-07

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