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Antimony-Doped Tin Oxide as Transparent Back Contact in Cu2ZnSnS4 Thin-Film Solar Cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science and Engineering, Solar Cell Technology.ORCID iD: 0000-0001-5973-4875
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Electrical Engineering, Solid-State Electronics.ORCID iD: 0000-0003-2679-2387
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science and Engineering, Solar Cell Technology.ORCID iD: 0000-0002-3461-6036
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.ORCID iD: 0000-0003-4334-7461
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2019 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 216, no 22, article id 1900542Article in journal (Refereed) Published
Abstract [en]

Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T < 550 degrees C. The electrical properties of ATO are even found to improve when CZTS is annealed at T = 534 degrees C. At T = 580 degrees C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.

Place, publisher, year, edition, pages
2019. Vol. 216, no 22, article id 1900542
Keywords [en]
antimony-doped tin oxides, Cu2ZnSnS4, sulfurization, thin-film solar cells, transparent back contacts
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-402260DOI: 10.1002/pssa.201900542ISI: 000488074100001OAI: oai:DiVA.org:uu-402260DiVA, id: diva2:1385165
Funder
Swedish Foundation for Strategic Research , FFL13-0178Swedish Foundation for Strategic Research , RMA15‐0030Swedish Foundation for Strategic Research , RIF13‐0053Swedish Research Council, 821‐2012‐5144Swedish Research Council, 2017‐00646 9Available from: 2020-01-13 Created: 2020-01-13 Last updated: 2020-01-13Bibliographically approved

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The full text will be freely available from 2021-11-21 15:14
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Englund, SvenKubart, TomasKeller, JanMoro, Marcos V.Primetzhofer, DanielSuvanam, Sethu SavedaScragg, Jonathan J.Platzer Björkman, Charlotte

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Englund, SvenKubart, TomasKeller, JanMoro, Marcos V.Primetzhofer, DanielSuvanam, Sethu SavedaScragg, Jonathan J.Platzer Björkman, Charlotte
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Solar Cell TechnologySolid-State ElectronicsApplied Nuclear Physics
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