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Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA.
Oregon State Univ, Sch Chem Biol & Environm Engn, Corvallis, OR 97331 USA.
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
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2020 (English)In: APPLIED PHYSICS REVIEWS, ISSN 1931-9401, Vol. 7, no 1, article id 011401Article, review/survey (Refereed) Published
Abstract [en]

The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, which would contribute to future applications in high-capacity storage devices and advanced computing.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2020. Vol. 7, no 1, article id 011401
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-403039DOI: 10.1063/1.5124373ISI: 000505723100001OAI: oai:DiVA.org:uu-403039DiVA, id: diva2:1388140
Funder
Australian Research Council, FT160100207
Note

De två första författarna delar förstaförfattarskapet.

Available from: 2020-01-23 Created: 2020-01-23 Last updated: 2020-01-23Bibliographically approved

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Primetzhofer, Daniel

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