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Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2008 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 100, no 4, 042014- p.Article in journal (Refereed) Published
Abstract [en]

For use in thin film electroacoustic (TEA) technology a few hundred nanometrethick nickel silicide (NiSi) electrode would need to be fabricated. A complete fabrication process for the formation of over 200 nm thick silicide films has been optimised for use as an electroacoustic electrode. Optimisation of silicidation temperature and identification of the mono phase of silicide is demonstrated. Thick electrodes are formed by depositing multilayers of silicon and nickel pairs onto silicon (Si) substrates before rapid thermal annealing. The numbers of multilayers and relative material thicknesses are optimized for both surface roughness and electrical resistivity. The growth of textured aluminium nitride (AlN) has been investigated on the optimised surfaces.

Place, publisher, year, edition, pages
IOP Publishing Ltd , 2008. Vol. 100, no 4, 042014- p.
Keyword [en]
silicides, Aluminum Nitride, Thin Films
National Category
Other Engineering and Technologies not elsewhere specified Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Materials Science
Identifiers
URN: urn:nbn:se:uu:diva-88218DOI: 10.1088/1742-6596/100/4/042014ISI: 000275655200062OAI: oai:DiVA.org:uu-88218DiVA: diva2:139716
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SSF ICTEAWISENET
Available from: 2009-01-26 Created: 2009-01-26 Last updated: 2017-12-14

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Martin, DavidYantchev, VentsislavOlsson, JörgenKatardjiev, Ilia

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Martin, DavidYantchev, VentsislavOlsson, JörgenKatardjiev, Ilia
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Solid State ElectronicsSolid State Electronics
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Journal of Physics, Conference Series
Other Engineering and Technologies not elsewhere specifiedElectrical Engineering, Electronic Engineering, Information Engineering

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