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Temperature Compensation of Thin Film Resonators utilizing the Lowest order Symmetric Lamb mode
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Fasta tillståndets elektronik)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Fasta tillståndets elektronik)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Fasta tillståndets elektronik)
2008 (English)Conference paper, Published paper (Other academic)
Abstract [en]

Micromachined Thin film plate acoustic wave resonators (FPAR) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2μm thick Aluminum Nitride (AlN) membranes have been successfully demonstrated[1]. However, a notable drawback of the proposed devices is their non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm/K to –25 ppm/K. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and demonstrated. Temperature compensation, while retaining at the same time the device electromechanical coupling, isexperimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz.

Place, publisher, year, edition, pages
USA: IEEE , 2008.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-88222OAI: oai:DiVA.org:uu-88222DiVA: diva2:139739
Conference
IEEE Int. Ultrasonic Symposia, Beijing, China (2008)
Note

In print

Available from: 2009-01-26 Created: 2009-01-26 Last updated: 2016-04-13Bibliographically approved

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Wingqvist,, GunillaArapan, LiliaYantchev, Ventsislav

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