uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
CVD of ZrO2 using ZrI4 as metal precursor
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
1999 In: J. Phys. IV France, Vol. 9, Pr8-487 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 9, Pr8-487 p.
URN: urn:nbn:se:uu:diva-89467OAI: oai:DiVA.org:uu-89467DiVA: diva2:160929
Available from: 2001-11-13 Created: 2001-11-13Bibliographically approved
In thesis
1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
Open this publication in new window or tab >>CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
2001 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2.

This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta2O5, ZrO2 and HfO2 using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition.

All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al2O3(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO2 deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2001. 56 p.
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 665
Chemistry, CVD, ALD, Dielectric constant, Tantalum oxide, Ta2O5, Zirconium oxide, ZrO2, Hafnium oxide, HfO2, QCM, Kemi
National Category
Chemical Sciences
Research subject
Inorganic Chemistry
urn:nbn:se:uu:diva-1415 (URN)91-554-5143-8 (ISBN)
Public defence
2001-10-19, The New Siegbahn Hall (room 10101) at the Ångström Laboratory, Uppsala University, Uppsala, 10:15
Available from: 2001-11-13 Created: 2001-11-13Bibliographically approved

Open Access in DiVA

No full text

By organisation
Department of Materials Chemistry

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 34 hits
ReferencesLink to record
Permanent link

Direct link