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Iodide-Based Atomic Layer Deposition of ZrO2: Aspects of Phase Stability and Dielectric Properties
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2002 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 8, no 3, 105-109 p.Article in journal (Refereed) Published
Abstract [en]

This study is an investigation into the influence of temperature, substrate, and thickness on the properties of ZrO2 thin films grown by atomic layer deposition (ALD). ZrI4 and H2O2 were used as source materials, and films deposited at temperatures between 250 °C and 500 °C consisted of mixed tetragonal and monoclinic ZrO2. The phase content and electrical properties of films of 3–30 nm thickness were studied for different temperatures and substrates. The films crystallized at smaller thicknesses on the Pt/Ti/SiO2/Si (denoted Pt in the following text) substrate than on polycrystalline Si (poly-Si) and MgO(001). It was also found that the film thickness had a stronger effect on the dielectric constant than either the growth temperature or the substrate.

Place, publisher, year, edition, pages
2002. Vol. 8, no 3, 105-109 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:uu:diva-89469DOI: 10.1002/1521-3862(20020503)8:3<105::AID-CVDE105>3.0.CO;2-EOAI: oai:DiVA.org:uu-89469DiVA: diva2:160931
Available from: 2001-11-13 Created: 2001-11-13 Last updated: 2017-12-14Bibliographically approved
In thesis
1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
Open this publication in new window or tab >>CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
2001 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2.

This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta2O5, ZrO2 and HfO2 using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition.

All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al2O3(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO2 deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2001. 56 p.
Series
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 665
Keyword
Chemistry, CVD, ALD, Dielectric constant, Tantalum oxide, Ta2O5, Zirconium oxide, ZrO2, Hafnium oxide, HfO2, QCM, Kemi
National Category
Chemical Sciences
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-1415 (URN)91-554-5143-8 (ISBN)
Public defence
2001-10-19, The New Siegbahn Hall (room 10101) at the Ångström Laboratory, Uppsala University, Uppsala, 10:15
Opponent
Available from: 2001-11-13 Created: 2001-11-13Bibliographically approved

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Olsson, Jörgen

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