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Deposition of HfO2 thin films in HfI4-based processes
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
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2002 (Swedish)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 149, no 10, F139-F144 p.Article in journal (Refereed) Published
Abstract [en]

This study describes deposition of HfO2 thin films by chemical vapor deposition (CVD) and atomic layer deposition (ALD) using HfI4 as the metal precursor. The layer-by-layer growth was also studied in real time with a quartz crystal microbalance. In ALD, the deposition rate was independent of the growth temperature, whereas in CVD, an exponential rate increase was observed. Monoclinic HfO2 was deposited on MgO and poly-Si substrates in a wide temperature range, and the choice of substrate had a strong influence on the orientation of the films. Epitaxial growth of HfO2 was observed on MgO(001) substrates at 400-500°C in the ALD process and at 500-600°C in the CVD process. The electrical characterization showed that the crystallinity of the films had a stronger influence on the dielectric constant than did the film thickness.

Place, publisher, year, edition, pages
2002. Vol. 149, no 10, F139-F144 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:uu:diva-89470DOI: 10.1149/1.1504720OAI: oai:DiVA.org:uu-89470DiVA: diva2:160932
Available from: 2001-11-13 Created: 2001-11-13 Last updated: 2017-12-14Bibliographically approved
In thesis
1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
Open this publication in new window or tab >>CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
2001 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2.

This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta2O5, ZrO2 and HfO2 using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition.

All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al2O3(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO2 deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2001. 56 p.
Series
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 665
Keyword
Chemistry, CVD, ALD, Dielectric constant, Tantalum oxide, Ta2O5, Zirconium oxide, ZrO2, Hafnium oxide, HfO2, QCM, Kemi
National Category
Chemical Sciences
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-1415 (URN)91-554-5143-8 (ISBN)
Public defence
2001-10-19, The New Siegbahn Hall (room 10101) at the Ångström Laboratory, Uppsala University, Uppsala, 10:15
Opponent
Available from: 2001-11-13 Created: 2001-11-13Bibliographically approved

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Olsson, Jörgen

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