Dielectric study of thin films of Ta2O5 and ZrO2
2001 (English)In: IEEE transactions on dielectrics and electrical insulation, ISSN 1070-9878, E-ISSN 1558-4135, Vol. 8, no 4, 648-651 p.Article in journal (Refereed) Published
Electronic conduction in sputtered Ta2O5 and ZrO2 thin films have been studied using impedance spectroscopy, isothermal transient ionic current, and current-voltage measurements. The dielectric properties of Ta2O5 were shown to be sensitively dependent on deposition parameters with two different frequency responses: a flat loss behavior with very low DC conductivity, or a relaxation peak together with a somewhat higher DC conductivity. ZrO2 has different dielectric properties when fresh, i.e. newly deposited, or aged. A fresh sample arbitrarily can show two different behaviors, consisting of a DC conductivity with a relaxation peak superimposed on it. The DC conductivity shows either of two different values. The aged sample has a lower permittivity and DC conductivity, and the relaxation peak is found at much lower frequencies. Fresh samples of ZrO2 also show switching behavior
Place, publisher, year, edition, pages
2001. Vol. 8, no 4, 648-651 p.
Medical and Health Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-89904DOI: 10.1109/94.946718OAI: oai:DiVA.org:uu-89904DiVA: diva2:161754