Atomic layer deposition of Ta2O5 using the TaI5 and O2 precursor combination
2003 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 9, no 5, 245-248 p.Article in journal (Refereed) Published
Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI5 and O2 precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine-free above 450 °C, and consisted of the polycrystalline orthorhombic β-Ta2O5 phase. The growth rate was found to be strongly dependent on the deposition temperature, reaching a maximum of 0.17 nm cycle–1 at 600 °C.
Place, publisher, year, edition, pages
2003. Vol. 9, no 5, 245-248 p.
IdentifiersURN: urn:nbn:se:uu:diva-90488DOI: 10.1002/cvde.200306243OAI: oai:DiVA.org:uu-90488DiVA: diva2:162859