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Silicon Germanium heterojunction bipolar transistors: Large-signal modeling and low-frequency noise characterization aspects
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1999 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. Good agreement-is found between calculated data using the model and measured data. Equations for the electrical parameters based on physical data and a fitting procedure for finding parameter values concerning parasitic effects are presented. In addition, a technique for extracting very short thermal time constants using small signal measurements is presented.

Using the large-signal model, a frequency multiplier employing a single SiGe HBT as the non-linear device has been designed and fabricated. The doubler operates with an output frequency of 55 GHz and performance can be well explained using the model.

Low-frequency noise in the SiGe HBT has been studied, primarily using transimpedance amplifiers. Problems related to the measurement of low-frequency noise are discussed. The dominant noise source in a SiGe HBT is discriminated using direct two-channel noise measurements for a sweep of base resistance terminations of the device. By employing a device temperature variation the temperature dependence of the dominant source is further studied. A method for improved coherence measurements during a sweep of base resistance terminations is presented. A method for modeling low-frequency noise in a SPICE based simulator and aspects of the noisecorner frequency are discussed.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis , 1999. , 126 p.
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 479
Keyword [en]
Materials science, Silicon Germanium, SiGe, Heterojunction Bipolar Transistor, HBT, Large-signal modeling, thermal time constant, low-frequency noise: coherence, transimpedance amplifier
Keyword [sv]
National Category
Materials Engineering
Research subject
URN: urn:nbn:se:uu:diva-377ISBN: 91-554-4558-6OAI: oai:DiVA.org:uu-377DiVA: diva2:163631
Public defence
1999-11-12, Room 4001, Ångström laboratory, Uppsala University, Uppsala, 09:30 (English)
Available from: 1999-10-22 Created: 1999-10-22 Last updated: 2010-03-05Bibliographically approved

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