Enhanced back reflectance and quantum efficiency in Cu(In,Ga)Se2 thin film solar cells with a ZrN back reflector
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 13, 2634-2636 p.Article in journal (Refereed) Published
A reactively sputtered ZrN reflector layer on top of the conventional Mo back contact yields enhanced absorber/back contact reflectance in Cu(In,Ga)Se2 thin film solar cells. Improved long wavelength quantum efficiency is demonstrated with a ZrN reflector at a Cu(In,Ga)Se2 thickness of 0.5 µm. The optical gain with respect to a standard Mo back contact is initially offset by increased back contact recombination and contact resistance, but these electronic losses can be suppressed by Ga grading of the absorber or by inclusion of a contact layer of MoSe$_2$. This allows for a significantly improved power conversion efficiency of devices with sub-micron Cu(In,Ga)Se2 thickness
Place, publisher, year, edition, pages
2004. Vol. 85, no 13, 2634-2636 p.
copper compounds, indium compounds, gallium compounds, zirconium compounds, molybdenum compounds, ternary semiconductors, semiconductor thin films, solar cells, thin film devices, sputtered coatings, contact resistance, photoreflectance, refractive index
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-92780DOI: 10.1063/1.1794860OAI: oai:DiVA.org:uu-92780DiVA: diva2:166073