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1 W/mm RF Power Density at 3.2 GHz for a Dual-layer RESURF LDMOS Transistor
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2002 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 23, no 4, 206-208 p.Article in journal (Refereed) Published
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2002. Vol. 23, no 4, 206-208 p.
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URN: urn:nbn:se:uu:diva-93399OAI: oai:DiVA.org:uu-93399DiVA: diva2:166861
Available from: 2005-09-02 Created: 2005-09-02 Last updated: 2017-12-14Bibliographically approved

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Vestling, Lars

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