Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
2004 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 5, 789-797 p.Article in journal (Refereed) Published
High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.
Place, publisher, year, edition, pages
2004. Vol. 48, no 5, 789-797 p.
Substrate losses, Modeling, RF MOSFET, LDMOS
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-93402DOI: 10.1016/j.sse.2003.12.005OAI: oai:DiVA.org:uu-93402DiVA: diva2:166864