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Improved Output Resistance in RF-power MOSFETs using Low Resistivity SOI Substrate
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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(English)Manuscript (Other academic)
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-93403OAI: oai:DiVA.org:uu-93403DiVA: diva2:166865
Available from: 2005-09-02 Created: 2005-09-02 Last updated: 2015-07-21Bibliographically approved
In thesis
1. High Frequency Analysis of Silicon RF MOS Transistors
Open this publication in new window or tab >>High Frequency Analysis of Silicon RF MOS Transistors
2005 (English)Doctoral thesis, comprehensive summary (Other academic)
Alternative title[sv]
Högfrekvensanalys av kisel RF MOS-transistorer
Abstract [en]

Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. A large extent of the research presented in the thesis concerns studies of this device, which have resulted in increased understanding of the device behavior and improved performance. The thesis starts with a brief survey of the RF-field, including the LDMOS transistor, followed by a description of the methods used in the investigations; simulations, modeling and measurements. Specific results presented in the appended papers are also briefly summarized.

A new concept for LDMOS transistors, which allows for both high frequency and high voltage operation, has been developed and characterized. World-record performance in terms of output power density was obtained: over 1 W/mm at 50 V and 3.2 GHz. Further understanding and improvements of the device are achieved using simulations and modeling. For determination of model parameters a new general parameter extraction technique was developed. The method has been successfully used for a large variety of high-frequency devices, and has been frequently used in the modeling work in this thesis.

Important properties of RF-power devices are the device linearity and power efficiency. Extensive studies regarding the efficiency were conducted using numerical simulations and modeling of the off-state output resistance, which is correlated to the efficiency. The results show that significant improvements can be obtained for devices on both bulk- and SOI-substrates, using thin high-resistivity substrates and very low-resistivity SOI-substrates, respectively.

Finally a new approach to drastically reduce substrate crosstalk by using very low-resistivity SOI substrate is proposed. Experimentally, a reduction of 20-40 dB was demonstrated in the GHz range compared to high-resistivity SOI substrate.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2005. 46 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 84
Keyword
Electronics, RF-power, LDMOS, Microwave transistor, SOI, Silicon, MOSFET, Elektronik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-5909 (URN)91-554-6323-1 (ISBN)
Public defence
2005-09-23, Siegbahnsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:00 (English)
Opponent
Supervisors
Available from: 2005-09-02 Created: 2005-09-02 Last updated: 2010-07-09Bibliographically approved

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Vestling, Lars

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