Atomic layer deposition of Zn1-xMgxO buffer layers for Cu(In,Ga)Se2 solar cells
2007 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 15, no 3, 225-235 p.Article in journal (Refereed) Published
Fabrication of Zn1-xMgxO films by atomic layer deposition (ALD) has been studied for use as buffer layers in Cu(In,Ga)Se2 (CIGS)-based solar cell devices. The Zn1-xMgxO films were grown using diethyl zinc, bis-cyclopentadienyl magnesium and water as precursors in the temperature range from 105 to 180°C. Single-phase ZnO-like films were obtained for x < 0·2, followed by a two phase region of ZnO- and MgO-like structures for higher Mg concentrations. Increasing optical band gaps of up to above 3·8 eV were obtained for Zn1-xMgxO with increasing x. It was found that the composition of the Zn1-xMgxO films varied as an effect of deposition temperature as well as by increasing the relative amount of magnesium precursor pulses during film growth. Completely Cd-free CIGS-based solar cells devices with ALD-Zn1-xMgxO buffer layers were fabricated and showed efficiencies of up to 14·1%, which was higher than that of the CdS references.
Place, publisher, year, edition, pages
2007. Vol. 15, no 3, 225-235 p.
atomic layer deposition, Zn1-xMgxO, Cu(In, Ga)Se2, band alignment
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-93921DOI: 10.1002/pip.733ISI: 000245707100004OAI: oai:DiVA.org:uu-93921DiVA: diva2:167561