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Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2004 (English)In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 51, no 10, 1347-1353 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2004. Vol. 51, no 10, 1347-1353 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-93979DOI: 10.1109/TUFFC.2004.1350963OAI: oai:DiVA.org:uu-93979DiVA: diva2:167648
Available from: 2006-01-27 Created: 2006-01-27 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Studies of the Reactive Sputtering Process and its Application in Electro-Acoustic Devices
Open this publication in new window or tab >>Studies of the Reactive Sputtering Process and its Application in Electro-Acoustic Devices
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Electro-acoustic devices such as surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices have been in commercial use for over 60 years and can be found in applications ranging from specialised scientific and military equipment to consumer products, such as mobile telephones, TV and radio receivers, etc. Today by far the largest market for electro-acoustic devices is the telecommunication industry which annually consumes approximately three billion acoustic wave filters for frequency control alone.

The development of new materials and technologies for electro-acoustic devices has gained a substantial and growing interest from both academic and industrial research communities in recent years due to the enormous growth in the telecommunication industry and other forms of wireless data communication. One of the bigger issues has been to replace the single crystalline substrates with thin film piezoelectric materials deposited by reactive sputtering. This would not only reduce the manufacturing costs but will also enable high frequency of operation and a wider choice of substrate materials. However, in order to obtain the material properties required for the intended application a detailed theoretical description of the reactive sputtering process is necessary since the texture and other functional properties of the piezoelectric material are extremely sensitive to the process parameters in addition to the structure of the underlying material.

This thesis studies the reactive sputtering process and its application for the fabrication of thin film electro-acoustic devices. The aim has been to gain a further insight into the process and make use of this knowledge to improve the fabrication of electro-acoustic devices. In this work modelling of the reactive sputtering process has been improved by studying certain fundamental aspects of the process and in particular the dynamics of the processes taking place during sputtering both at the target and the substrate surfaces. Consequently, highly textured thin piezoelectric aluminium nitride films have been synthesized and thin film bulk acoustic resonators (FBAR) operating in the GHz range have been fabricated and studied.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 61 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 142
Keyword
Materials science, Sputtering, Reactive Sputtering, Electro Acoustic Devices, Materialvetenskap
National Category
Materials Engineering
Identifiers
urn:nbn:se:uu:diva-6320 (URN)91-554-6452-1 (ISBN)
Public defence
2006-02-17, 10134, Ångström Laboratory, 10:00
Opponent
Supervisors
Available from: 2006-01-27 Created: 2006-01-27Bibliographically approved
2. Advanced Thin Film Electroacoustic Devices
Open this publication in new window or tab >>Advanced Thin Film Electroacoustic Devices
2007 (English)Doctoral thesis, comprehensive summary (Other academic)
Alternative title[sv]
Avancerade Elektroakustiska Tunnfilmskomponenter
Abstract [en]

The explosive development of the telecom industry and in particular wireless and mobile communications in recent years has lead to a rapid development of new component and fabrication technologies to continually satisfy the mutually exclusive requirements for better performance and miniaturization on the one hand and low cost on the other. A fundamental element in radio communications is time and frequency control, which in turn is achieved by high performance electro-acoustic components made on piezoelectric single crystalline substrates. The latter, however, reach their practical limits in terms of performance and cost as the frequency of operation reaches the microwave range. Thus, the thin film electro-acoustic technology, which uses thin piezoelectric films instead, has been recently developed to alleviate these deficiencies.

This thesis explores and addresses a number of issues related to thin film synthesis on the one hand as well as component design and fabrication on other. Specifically, the growth of highly c-axis textured AlN thin films has been studied and optimized for achieving high device performance. Perhaps, one of the biggest achievements of the work is the development of a unique process for the deposition of AlN films with a mean c-axis tilt, which is of vital importance for the fabrication of resonators operating in contact with liquids, i.e. biochemical sensors. This opens the way for the development of a whole range of sensors and bio-analytical tools. Further, high frequency Lamb wave resonators have been designed, fabricated and evaluated. Performance enhancement of FBAR devices is also addressed, e.g. spurious mode suppression, temperature compensation, etc. It has been demonstrated, that even without temperature compensation, shear mode resonators operating in a liquid still exhibit an excellent performance in terms of Q (200) and coupling (~1.8%) at 1.2 GHz, resulting in a mass resolution better than 2 ng cm-2 in water, which excels that of today’s quartz sensors.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2007. 84 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 280
Keyword
Technology, aluminum nitride, FBAR, shear mode resonator, lamb wave devices, liquid sensor, biosensor, temperature compensation, reactive sputtering, TEKNIKVETENSKAP
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-7672 (URN)978-91-554-6819-4 (ISBN)
Public defence
2007-03-30, Polhemssalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 09:30 (English)
Opponent
Supervisors
Available from: 2007-03-08 Created: 2007-03-08 Last updated: 2010-02-18Bibliographically approved

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