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Investigation of the electrical behavior of an asymmetric MOSFET
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2003 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 65, no 4, 428-438 p.Article in journal (Refereed) Published
Abstract [en]

In this study a possible approach for improving breakdown voltage while maintaining fT for a MOSFET, is presented. In a conventional MOSFET process with LDD the S/D is implanted with a large tilt angle, which gives an asymmetry due to the shadowing effect by the gate. This asymmetry results in a longer drain-LDD region, which in combination with a lower LDD dose, could reduce the electrical field near the drain pinch-off region. A simulation study for different LDD doses and angles has been performed. It is shown that there exist an optimum range of LDD doses where the asymmetric device has higher figure-of-merit, concerning breakdown voltage and cut-off frequency, than the symmetric MOSFET structure.

Place, publisher, year, edition, pages
2003. Vol. 65, no 4, 428-438 p.
Keyword [en]
Asymmetric, LDD, MOSFET, Tilted implantation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-94492DOI: 10.1016/S0167-9317(03)00054-6OAI: oai:DiVA.org:uu-94492DiVA: diva2:168359
Available from: 2006-04-25 Created: 2006-04-25 Last updated: 2017-12-14
In thesis
1. Advanced TCAD Simulations and Characterization of Semiconductor Devices
Open this publication in new window or tab >>Advanced TCAD Simulations and Characterization of Semiconductor Devices
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Today, micro- and nano-electronic devices are becoming more complex and advanced as the dimensions are shrinking. It is therefore a very challenging task to develop new device technologies with performance that can be predicted. This thesis focuses on advanced measurement techniques and TCAD simulations in order to characterize and understand the device physics of advanced semiconductor devices.

TCAD simulations were made on a novel MOSFET device with asymmetric source and drain structures. The results showed that there exists an optimum range of implantation doses where the device has a significantly higher figure-of-merit regarding speed and voltage capability, compared to a symmetric MOSFET. Furthermore, both 2D and 3D simulations were used to develop a resistive model of the substrate noise coupling.

Of particular interest to this thesis is the random dopant fluctuation (RDF). The result of RDF can be characterized using very advance and reliable measurement techniques. In the thesis an ultra-high precision parametric mismatch measurement system was designed and implemented. The best ever reported performance on short-term repeatability of the measurements was demonstrated. A new bipolar parametric mismatch phenomenon was also revealed using the measurement system.

A complete simulation platform, called SiSPET (Simulated Statistical Parameter Extraction Tool), was developed and integrated into the framework of a commercial TCAD environment. A special program for randomization of the doping was developed and proven to provide RDF effects in agreement measurement. The SiSPET system was used to investigate how different device models were able to take RDF effects into account. The RDF effects were translated in to parameter fluctuations using the developed extraction routines. It was shown that the basic MOSFET fluctuation model could be improved by including the field dependenent mobility. However, if a precise description of the fluctuations is required an advanced compact-model, such as MOS Model 11 should be used.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. viii+50 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 182
Keyword
Electronics, MOSFET, RDF, random dopant fluctuation, asymmetric, parametric mismatch, TCAD, compact modeling, fluctuation model, Elektronik
Identifiers
urn:nbn:se:uu:diva-6883 (URN)91-554-6567-6 (ISBN)
Public defence
2006-05-16, Häggsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 09:30
Opponent
Supervisors
Available from: 2006-04-25 Created: 2006-04-25Bibliographically approved

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Vestling, LarsOlsson, Jörgen

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