uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Some properties of TiN films produced in hollow cathode and microwave ECR hybrid plasma system
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2006 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 201, no 3-4, 1464-1468 p.Article in journal (Refereed) Published
Abstract [en]

Properties of TiN films grown in a hybrid system combining linear magnetized hollow cathode with Ti plates and an electron cyclotron resonance (ECR) microwave plasma were studied. The films of 0.5-1.6 μm in thickness were deposited on both high-speed steel (HSS) and Si substrates. High quality films with dense microstructure and high hardness were obtained. Microstructure was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) was used for study of the surface morphology and the film-substrate interface, and mechanical properties were evaluated by nano indentation. It has been found that the interaction of the microwave power with both the substrate and the growing film can affect the growth regime and consequently the film properties. Formation of interfacial film defects is more frequent on Si substrates than on steel due to an absorption of the microwave power in the Si substrate during deposition. This effect was confirmed by temperature measurements. The TiN film properties were compared with reference samples deposited by conventional methods. The films obtained by the hybrid source reach quality comparable or even better than the best commercial TiN films.

Place, publisher, year, edition, pages
2006. Vol. 201, no 3-4, 1464-1468 p.
Keyword [en]
Hybrid plasma, TiN films, Microstructure, Microwave power absorption
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-94598DOI: 10.1016/j.surfcoat.2006.02.019ISI: 000244477300131OAI: oai:DiVA.org:uu-94598DiVA: diva2:168495
Available from: 2006-05-17 Created: 2006-05-17 Last updated: 2016-06-22Bibliographically approved
In thesis
1. Hollow Cathode Deposition of Thin Films
Open this publication in new window or tab >>Hollow Cathode Deposition of Thin Films
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Thin films of metals and compounds have a very wide range of applications today. Many of the deposition methods used for the production of such films utilize plasma to support the growth the film, e.g. by the supply of energy and the enhancement of reactivity. This thesis focuses on the physical vapor deposition (PVD) of thin films by high density plasma sources based on hollow cathodes and aims to increase the understanding of the deposition process and its influence on the film properties.

Titanium nitride films reactively deposited by the low-pressure hybrid plasma (HYP LP) source exhibited excellent properties and was deposited at considerable higher rates than films deposited by conventional methods.

An original finding in this work is the influence of substrate material on the deposition process and consequently on the properties of the deposited film. In the deposition of TiN films by the HYP LP source it was found that the substrate temperature was higher for Si substrates than for steel substrates due to a more efficient absorption of microwave power in Si than in steel. Further, it was found that ferromagnetic substrates influence the film growth in magnetized plasma systems. An effect of the ferromagnetic substrates is the enhancement of ion bombardment that increases the growth temperature and affects the texture and morphology of the growing films. It was also found that a DC bias can change the TiN film properties considerably and compensate the effect of ferromagnetic substrates.

High rate depositions of chromium and chromium nitride films by the RF hollow cathode plasma jet (RHCPJ) source were studied. The performance of the reactive diffuse arc process and the CrN film properties indicates that the process can be transferred from small cylindrical cathodes to linear magnetized hollow cathodes which allow deposition on considerable larger areas and this is important for industrial applications.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 55 p.
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 194
Electronics, Hollow cathode, Hybrid plasma, PVD, TiN films, Ferromagnetic substrates, Magnetized plasma, CrN films, Elektronik
urn:nbn:se:uu:diva-6925 (URN)91-554-6586-2 (ISBN)
Public defence
2006-06-07, Häggsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:00
Available from: 2006-05-17 Created: 2006-05-17Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Gustavsson, Lars-ErikBaránková, HanaBárdoš, Ladislav
By organisation
Solid State Electronics
In the same journal
Surface & Coatings Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 408 hits
ReferencesLink to record
Permanent link

Direct link