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UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Physics I.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
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2005 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 580, no 1-3, 207-217 p.Article in journal (Refereed) Published
Abstract [en]

Metal–organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 °C and flux-limited growth at 500 °C. The interfacialproperties have been characterized by monitoring synchrotron radiation excited Si2pphotoemissionspectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiOx/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiOx/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO2)x(SiO2)y where x and y changes linearly and continuously over the interface. The model quantifies how (TiO2)x(SiO2)y mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon.

Place, publisher, year, edition, pages
2005. Vol. 580, no 1-3, 207-217 p.
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-94706DOI: 10.1016/j.susc.2005.02.016OAI: oai:DiVA.org:uu-94706DiVA: diva2:168662
Available from: 2006-09-04 Created: 2006-09-04 Last updated: 2012-10-09Bibliographically approved
In thesis
1. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
Open this publication in new window or tab >>Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. In this thesis, a surface science approach has been employed to study the formation of interfaces in systems relevant for transistor and solar cell applications. Surface science methodology entails ultra high vacuum environment, single crystalline surfaces, submonolayer control of deposited material, surface sensitive spectroscopy and atomic resolution microscopy.

The primary experimental method for characterization is electron spectroscopy. This is a family of very powerful experimental techniques capable of giving information on the atomic level. Additionally, studies have been performed using scanning tunnelling microscopy. Combined these two methods can provide an atomic level characterisation of the geometric and electronic properties of the surface.

The emphasis of this work is placed on ultra thin TiO2 and ZrO2 films grown on silicon substrates by means of ultra-high vacuum metal-organic chemical vapour deposition. ZrO2 has also been grown on SiC and FeCrAl. Deposition has been performed with different process parameters. The interface region of each film has been characterised. The band alignment, a most important issue with regard to the development of new transistor devices, for the ZrO2/Si(100) system has been explored. Decomposition pathways of the metal organic precursors have been studied in detail. Changing process parameters is shown to alter both the precursor decomposition pathway and the nature of the interface region, thus opening the possibility to tailor the material function.

The titanium dioxide films grown in situ have shown to be excellent models of nanostructured electrode materials. In this spirit, interfaces of model systems for the solid-state dye-sensitized solar cell have been studied. Links between device performance and interface structure have been elucidated.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 58 p.
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 203
Physics, chemical vapour deposition, high-k, metal oxides, silicon, dye-solid interface, metal organic, electron spectroscopy, scanning tunnelling microscopy, Fysik
urn:nbn:se:uu:diva-7088 (URN)91-554-6622-2 (ISBN)
Public defence
2006-09-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
Available from: 2006-09-04 Created: 2006-09-04 Last updated: 2012-10-09Bibliographically approved

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