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Surface chemistry of HfI4 on Si(100)-(2x1) studied by core level photoelectron spectroscopy
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and condensed matter physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
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2007 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 601, no 4, 917-923 p.Article in journal (Refereed) Published
Abstract [en]

The chemistry of HfI4 adsorbed on the Si(100)-(2 x 1) surface has been studied by core level photoelectron spectroscopy in ultra-high vacuum. Two stable surface intermediates are identified: HfI3 and HfI2, both of which remain upon heating to 690 K. The dissociation of HfI4 is accompanied by the formation of SiI. In addition, HfI4 is observed up to 300 K. Complete desorption of iodine occurs in the temperature regime 690-780 K. Deposition of HfI4 at 870 K results in a layer consisting of metallic Hf, whereas deposition at 1120 K results in the formation of Hf silicide. The results indicate that the metallic Hf formed at 870 K is in the form of particles. Oxidation of this film by O2 at low pressure does not result in complete Hf oxidation. This suggests that complete oxidation of Hf is a critical step when using HfI4 as precursor in atomic layer deposition.

Place, publisher, year, edition, pages
2007. Vol. 601, no 4, 917-923 p.
Keyword [en]
Atomic layer deposition, Chemisorption, Hafnium iodide, Hafnium oxide, Low index single crystal surfaces, Silicon, Synchrotron radiation photoelectron spectroscopy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-94713DOI: 10.1016/j.susc.2006.11.026ISI: 000245155800008OAI: oai:DiVA.org:uu-94713DiVA: diva2:168669
Available from: 2006-09-04 Created: 2006-09-04 Last updated: 2016-04-26
In thesis
1. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
Open this publication in new window or tab >>Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. In this thesis, a surface science approach has been employed to study the formation of interfaces in systems relevant for transistor and solar cell applications. Surface science methodology entails ultra high vacuum environment, single crystalline surfaces, submonolayer control of deposited material, surface sensitive spectroscopy and atomic resolution microscopy.

The primary experimental method for characterization is electron spectroscopy. This is a family of very powerful experimental techniques capable of giving information on the atomic level. Additionally, studies have been performed using scanning tunnelling microscopy. Combined these two methods can provide an atomic level characterisation of the geometric and electronic properties of the surface.

The emphasis of this work is placed on ultra thin TiO2 and ZrO2 films grown on silicon substrates by means of ultra-high vacuum metal-organic chemical vapour deposition. ZrO2 has also been grown on SiC and FeCrAl. Deposition has been performed with different process parameters. The interface region of each film has been characterised. The band alignment, a most important issue with regard to the development of new transistor devices, for the ZrO2/Si(100) system has been explored. Decomposition pathways of the metal organic precursors have been studied in detail. Changing process parameters is shown to alter both the precursor decomposition pathway and the nature of the interface region, thus opening the possibility to tailor the material function.

The titanium dioxide films grown in situ have shown to be excellent models of nanostructured electrode materials. In this spirit, interfaces of model systems for the solid-state dye-sensitized solar cell have been studied. Links between device performance and interface structure have been elucidated.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 58 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 203
Keyword
Physics, chemical vapour deposition, high-k, metal oxides, silicon, dye-solid interface, metal organic, electron spectroscopy, scanning tunnelling microscopy, Fysik
Identifiers
urn:nbn:se:uu:diva-7088 (URN)91-554-6622-2 (ISBN)
Public defence
2006-09-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
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Supervisors
Available from: 2006-09-04 Created: 2006-09-04 Last updated: 2012-10-09Bibliographically approved

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Sandell, Anders

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