Surface chemistry of HfI4 on Si(100)-(2x1) studied by core level photoelectron spectroscopy
2007 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 601, no 4, 917-923 p.Article in journal (Refereed) Published
The chemistry of HfI4 adsorbed on the Si(100)-(2 x 1) surface has been studied by core level photoelectron spectroscopy in ultra-high vacuum. Two stable surface intermediates are identified: HfI3 and HfI2, both of which remain upon heating to 690 K. The dissociation of HfI4 is accompanied by the formation of SiI. In addition, HfI4 is observed up to 300 K. Complete desorption of iodine occurs in the temperature regime 690-780 K. Deposition of HfI4 at 870 K results in a layer consisting of metallic Hf, whereas deposition at 1120 K results in the formation of Hf silicide. The results indicate that the metallic Hf formed at 870 K is in the form of particles. Oxidation of this film by O2 at low pressure does not result in complete Hf oxidation. This suggests that complete oxidation of Hf is a critical step when using HfI4 as precursor in atomic layer deposition.
Place, publisher, year, edition, pages
2007. Vol. 601, no 4, 917-923 p.
Atomic layer deposition, Chemisorption, Hafnium iodide, Hafnium oxide, Low index single crystal surfaces, Silicon, Synchrotron radiation photoelectron spectroscopy
IdentifiersURN: urn:nbn:se:uu:diva-94713DOI: 10.1016/j.susc.2006.11.026ISI: 000245155800008OAI: oai:DiVA.org:uu-94713DiVA: diva2:168669