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Interfacial Properties of the Nanostructured Dye-Sensitized Solid Heterojunction TiO2/RuL2(NCS)2/CuI
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Physics I.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Physical Chemistry.
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2004 (English)In: Journal of Chemical Physics, ISSN 0021-9606, E-ISSN 1089-7690, Vol. 120, no 23, 11224-11232 p.Article in journal (Refereed) Published
Abstract [en]

The interfaces of the nanostructured dye-sensitized solid heterojunction TiO2/Ru–dye/CuIhave been studied using photoelectron spectroscopy of core and valence levels, x-ray absorption spectroscopy and atomic force microscopy. A nanostructured anatase TiO2 film sensitized with RuL2(NCS)2 [cis-bis(4,4-dicarboxy-2,2-bipyridine)-bis(isothio-cyanato)-ruthenium(II)] was prepared in a controlled way using a novel combined in-situ and ex-situ(Ar atmosphere) method. Onto this film CuI was deposited in-situ. The formation of the dye–CuI interface and the changes brought upon the dye–TiO2 interface could be monitored in a stepwise fashion. A direct interaction between the dye NCS groups and the CuI is evident in the core level photoelectron spectra. Concerning the energy matching of the valence electronic levels, the photoelectron spectra indicate that the dye HOMO overlaps in energy with the Cu 3d–I 5p hydrid states. The CuI grow in the form of particles, which at the initial stages displace the dye molecules causing dye–TiO2 bond breaking. Consequently, the very efficient charge injection channel provided by the dye–TiO2carboxylic bonding is directly affected for a substantial part of the dye molecules. This may be of importance for the functional properties of such a heterojunction

Place, publisher, year, edition, pages
2004. Vol. 120, no 23, 11224-11232 p.
National Category
Physical Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-94715DOI: 10.1063/1.1739399OAI: oai:DiVA.org:uu-94715DiVA: diva2:168671
Available from: 2006-09-04 Created: 2006-09-04 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
Open this publication in new window or tab >>Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. In this thesis, a surface science approach has been employed to study the formation of interfaces in systems relevant for transistor and solar cell applications. Surface science methodology entails ultra high vacuum environment, single crystalline surfaces, submonolayer control of deposited material, surface sensitive spectroscopy and atomic resolution microscopy.

The primary experimental method for characterization is electron spectroscopy. This is a family of very powerful experimental techniques capable of giving information on the atomic level. Additionally, studies have been performed using scanning tunnelling microscopy. Combined these two methods can provide an atomic level characterisation of the geometric and electronic properties of the surface.

The emphasis of this work is placed on ultra thin TiO2 and ZrO2 films grown on silicon substrates by means of ultra-high vacuum metal-organic chemical vapour deposition. ZrO2 has also been grown on SiC and FeCrAl. Deposition has been performed with different process parameters. The interface region of each film has been characterised. The band alignment, a most important issue with regard to the development of new transistor devices, for the ZrO2/Si(100) system has been explored. Decomposition pathways of the metal organic precursors have been studied in detail. Changing process parameters is shown to alter both the precursor decomposition pathway and the nature of the interface region, thus opening the possibility to tailor the material function.

The titanium dioxide films grown in situ have shown to be excellent models of nanostructured electrode materials. In this spirit, interfaces of model systems for the solid-state dye-sensitized solar cell have been studied. Links between device performance and interface structure have been elucidated.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 58 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 203
Keyword
Physics, chemical vapour deposition, high-k, metal oxides, silicon, dye-solid interface, metal organic, electron spectroscopy, scanning tunnelling microscopy, Fysik
Identifiers
urn:nbn:se:uu:diva-7088 (URN)91-554-6622-2 (ISBN)
Public defence
2006-09-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
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Available from: 2006-09-04 Created: 2006-09-04 Last updated: 2012-10-09Bibliographically approved

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Rensmo, Håkan

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