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Electronic structure of lithium-doped anatase TiO2 prepared in ultrahigh vacuum
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
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2005 In: Physical Review B, ISSN 10980121, Vol. 71, no 23, 235418- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2005. Vol. 71, no 23, 235418- p.
URN: urn:nbn:se:uu:diva-94942OAI: oai:DiVA.org:uu-94942DiVA: diva2:168974
Available from: 2006-10-13 Created: 2006-10-13Bibliographically approved
In thesis
1. Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy
Open this publication in new window or tab >>Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions.

Studies on in situ ion insertion of lithium into thin TiO2 systems were performed. The electronic and geometric properties are investigated in detail, along with an estimation of charge transfer from Li to Ti.

A detailed study of chemical vapour deposition of ZrO2 on Si(100)-(2x1) was performed. ZrO2 is found to be an insulator, i.e. its electronic levels are decoupled from the substrate and the Zr levels are best referenced to the local vacuum level. The alignment of the valence and conduction band has been determined.

Combinatorial chemical vapour deposition of TiO2 and ZrO2 on Si(100)-(2x1) was realized. A film with graded stoichiometry consisting of pure TiO2 and ZrO2 on the opposing ends and mixed composition of both oxides in the middle was obtained. A detailed study of the electronic levels revealed that ZrO2 remains an insulator in the monolayer regime and that modification of ZrO2 with a small amount of TiO2 leads to a more symmetric alignment of the bands relative to Si.

The influence of a core hole on the O 1s x-ray absorption spectrum in TiO2 and ZrO2 is elucidated. Supported by O 1s photoemission measurements and ab initio calculations it is concluded that the static final state picture as well as dynamical threshold effects must be considered in order to determine the location of the conduction band minimum within the XAS framework.

Finally a Co modified Co:ZnO film was shown to display ferromagnetic properties. It could be evidenced that Co with oxygen as nearest neighbours was responsible for the magnetism and not metallic Co.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 69 p.
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 228
Physics, electron spectroscopy, metal oxide, chemical vapour deposition, ion insertion, metal organic, band alignment, zirconium, titanium, silicon, high k, Fysik
urn:nbn:se:uu:diva-7180 (URN)91-554-6673-7 (ISBN)
Public defence
2006-11-03, Häggsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:15
Available from: 2006-10-13 Created: 2006-10-13 Last updated: 2011-02-10Bibliographically approved

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