uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Li insertion in sol-gel prepared Mn-doped TiO2 studied by electron spectroscopy in ultrahigh vacuum
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Physics I.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Physics I.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Show others and affiliations
2007 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 111, no 8, 3459-3466 p.Article in journal (Refereed) Published
Abstract [en]

The properties of a sol-gel prepared Mn-modified TiO2 film have been studied with X-ray absorption spectroscopy (XAS) and photoelectron spectroscopy (PES) using synchrotron radiation. The chemical composition and oxidation state of the elements have been determined. The manganese content estimated by PES of the Mn-modified film is about 10% and both Mn2+ and Mn3+ are observed. Addition of Mn is found to modify the valence band edge. The Mn 3d states are found to extend about 1 eV into the TiO 2 band gap region. It is demonstrated that lithium insertion into the sol-gel film can be performed in a stepwise fashion in situ under ultrahigh vacuum (UHV) conditions. Lithium is distributed evenly throughout the entire film and leads to reduction of Mn3+ to Mn2+ followed by reduction of Ti4+ to Ti3+. The XAS and PES measurements give fully consistent results regarding the amount of inserted lithium.

Place, publisher, year, edition, pages
2007. Vol. 111, no 8, 3459-3466 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-94944DOI: 10.1021/jp066192nISI: 000245005900037OAI: oai:DiVA.org:uu-94944DiVA: diva2:168976
Available from: 2006-10-13 Created: 2006-10-13 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy
Open this publication in new window or tab >>Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions.

Studies on in situ ion insertion of lithium into thin TiO2 systems were performed. The electronic and geometric properties are investigated in detail, along with an estimation of charge transfer from Li to Ti.

A detailed study of chemical vapour deposition of ZrO2 on Si(100)-(2x1) was performed. ZrO2 is found to be an insulator, i.e. its electronic levels are decoupled from the substrate and the Zr levels are best referenced to the local vacuum level. The alignment of the valence and conduction band has been determined.

Combinatorial chemical vapour deposition of TiO2 and ZrO2 on Si(100)-(2x1) was realized. A film with graded stoichiometry consisting of pure TiO2 and ZrO2 on the opposing ends and mixed composition of both oxides in the middle was obtained. A detailed study of the electronic levels revealed that ZrO2 remains an insulator in the monolayer regime and that modification of ZrO2 with a small amount of TiO2 leads to a more symmetric alignment of the bands relative to Si.

The influence of a core hole on the O 1s x-ray absorption spectrum in TiO2 and ZrO2 is elucidated. Supported by O 1s photoemission measurements and ab initio calculations it is concluded that the static final state picture as well as dynamical threshold effects must be considered in order to determine the location of the conduction band minimum within the XAS framework.

Finally a Co modified Co:ZnO film was shown to display ferromagnetic properties. It could be evidenced that Co with oxygen as nearest neighbours was responsible for the magnetism and not metallic Co.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2006. 69 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 228
Keyword
Physics, electron spectroscopy, metal oxide, chemical vapour deposition, ion insertion, metal organic, band alignment, zirconium, titanium, silicon, high k, Fysik
Identifiers
urn:nbn:se:uu:diva-7180 (URN)91-554-6673-7 (ISBN)
Public defence
2006-11-03, Häggsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:15
Opponent
Supervisors
Available from: 2006-10-13 Created: 2006-10-13 Last updated: 2011-02-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
Physics IDepartment of Materials Chemistry
In the same journal
The Journal of Physical Chemistry C
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 511 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf