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Analysis of Low Frequency Noise in Schottky Junction Trigate Silicon Nanowire FET on Bonded SOI Substrate
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Electrical Engineering, Solid-State Electronics.ORCID iD: 0000-0001-5495-0253
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Electrical Engineering, Solid-State Electronics.ORCID iD: 0000-0003-4317-9701
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Electrical Engineering, Solid-State Electronics.ORCID iD: 0000-0001-8841-2832
2022 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 69, no 8, p. 4667-4673Article in journal (Refereed) Published
Abstract [en]

In this work, low frequency noise (LFN) in Schottky junction trigate silicon nanowire (SiNW) field-effect transistors (FETs) (SJGFETs) fabricated on bonded silicon on insulator (SOI) substrate is systematically analyzed. The LFN exhibited a typical 1/f spectrum and can be well described by the carrier number fluctuation (CNF) with correlated mobility fluctuation (CMF) model. It was found that CNF is the dominant component of the LFN, while CMF associated with the Coulomb scattering near the buried oxide (BOX)/SiNW channel interface plays an insignificant role. Applying a substrate bias can further modulate the LFN of the SJGFETs, and the effect is ascribed to the nonuniform energy distribution of the BOX/SiNW channel interface traps. Confining current path in the channel bulk away from the interface brought limited gain in terms of LFN performance. Finally, our experimental results suggested a possible transition of CMF mechanism from Coulomb scattering to surface roughness scattering when the current path is pushed away from the BOX/SiNW channel interface to the channel bulk.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2022. Vol. 69, no 8, p. 4667-4673
Keywords [en]
Coulomb scattering, low frequency noise (LFN), number fluctuation, Schottky junction gate, silicon nanowire, surface roughness scattering
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-483625DOI: 10.1109/TED.2022.3180983ISI: 000826426200001OAI: oai:DiVA.org:uu-483625DiVA, id: diva2:1692995
Funder
Swedish Research Council, 2019-04690Swedish Foundation for Strategic Research, FFL15-0174Knut and Alice Wallenberg Foundation, 2020-0190Available from: 2022-09-05 Created: 2022-09-05 Last updated: 2023-10-20Bibliographically approved
In thesis
1. Silicon Nanowire Based Sensors for Bacterial Tests
Open this publication in new window or tab >>Silicon Nanowire Based Sensors for Bacterial Tests
2023 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Rapid and reliable antibiotic susceptibility testing (AST) is urgently required to diagnose bacterial infectious diseases and avoid antibiotic misuse, providing valuable information on the efficacy of antibiotic agents and their dosages for treatment. However, the currently employed phenotypic ASTs normally demand the growth of bacteria into colonies, which usually takes more than two days. In this thesis, silicon nanowire field-effect transistors (SiNWFETs) are emploied to realize rapid ASTs, and a novel suspended SiNW-net sensor is also developed as a potential device platform for bacterial motility detection.

The thesis first introduces SiNWFET sensors for rapid ASTs. The extracellular pH change generated by bacterial metabolism is an efficient indicator of bacterial activity, which is monitored by our SiNWFET sensors. Rapid ASTs are achieved by using SiNWFET sensors array with a total assay time of less than 30 minutes for different bacterial strains. As a follow-up, the metabolic response of E. coli under ampicillin treatment is systematically studied. When exposed to bactericidal antibiotics, the bacterial respiration rate will be accelerated, thereby enhancing the lethality of the antibiotics. This work demonstrates the capabilities of SiNWFETs for rapid ASTs and bacterial metabolism investigations.

To further improve the detection limit of SiNWFET, Schottky junction gated SiNWFET (SJGFET) is developed, in which the noisy Si channel/gate oxide interface is replaced by a PtSi/Si junction. Ultra-low low-frequency noise is demonstrated in SJGFETs fabricated on high-quality bonded silicon-on-insulator (SOI) substrate. The best achieved Svg are 1.2 × 10−10 and 1.1 × 10−11 V2μm2/Hz at 1 Hz and 10 Hz, respectively. Then, a thorough investigation of low-frequency noise (LFN) is performed using the CNF + CMF model specifically modified for SJGFET structure on SOI substrate. The observed LFN dependence on substrate voltage and channel width is mainly ascribed to the nonuniform energy distribution of interface traps.

For the purposes of bacterial mobility detection, we propose a novel SiNW-net-based nanoelectromechanical sensor, with a 30-μm suspended SiNW-net and a metal Lorentz loop stacked on top. The lock-in amplifier measurement setup is optimized to significantly reduce the system noise. During rapid thermal processing in the device fabrication, lateral boron autodoping is discovered, which happens via ambient diffusion limited by the redeposition step at the interface. This technique enables shallow junction formation and will be integrated into SiNW-net fabrication to form well-controlled piezoresistors.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2023. p. 95
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 2326
Keywords
silicon nanowire, field-effect transistor, antibiotic susceptibility test, bacterial metabolism, nanoelectromechanical sensor, multiplexed detection
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-514502 (URN)978-91-513-1935-3 (ISBN)
Public defence
2023-12-11, Sonja Lyttkens, Ångström Laboratory, Lägerhyddsvägen 1, Uppsala, 12:00 (English)
Opponent
Supervisors
Available from: 2023-11-22 Created: 2023-10-18 Last updated: 2023-11-22

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Yu, YingtaoZhang, ZhenChen, Si

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