Theoretical calculations of mobility enhancement in strained silicon
2007 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 75, no 19, 195213- p.Article in journal (Refereed) Published
The conductivity enhancement of n -doped Si due to strain has been calculated by solving the Boltzmann equation within the relaxation-time approximation. For T=0 , we determined the Fermi surface from first principles, whereas for T>0 , we modeled the Fermi surface using the effective-mass approximation. We explain the saturation of the conductivity enhancement with increasing strain in terms of the topology of the Fermi surface. We find in accordance with experiment a decreasing enhancement with increasing doping concentration.
Place, publisher, year, edition, pages
2007. Vol. 75, no 19, 195213- p.
Elemental semiconductors, Low-field transport and mobility; piezoresistance, Theory of electronic transport; scattering mechanisms
IdentifiersURN: urn:nbn:se:uu:diva-96773DOI: 10.1103/PhysRevB.75.195213ISI: 000246890800073OAI: oai:DiVA.org:uu-96773DiVA: diva2:171457