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Core-shell nanowire heterostructure is a new architecture for photodetector application with enlarged active surface area enhancing light absorption and photodetector performance. As an emanating coating material, SnS2 has a growing interest in next-generation optoelectronic materials. Here, we reported the enhanced optoelectronic performance of the hydrothermally grown SnS2 and Si nanowire (SiNWs) core-shell heterostructure. Hydrothermally grown SnS2 on Si nanowire creates a uniform coating over the entire surface of nanowires which enhances the heterostructure's effective junction area and improves optoelectronic performance over the broad spectral range (300 - 1100 nm). Specially, under 340 nm illumination, the core-shell photodetector exhibits large responsivity (-383 A/W) and extremely high external quantum efficiency (-2 x 105 %) at very low optical power (-20 nW/mm2). This SnS2/SiNWs core-shell heterostructure with significantly improved optoelectronic performance will be favourable for the development of photodetector with an ability to work with extremely high efficiency.