Thick NiSi Electrodes for AlN Electroacoustic Applications
2009 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 12, no 5, H182-H184 p.Article in journal (Refereed) Published
Theuse of thick NiSi electrodes in electroacoustic resonators allows front-endintegration with integrated circuit technology. Problems are identified in theformation of thick nickel silicide (NiSi) electrodes via a singledeposition of Ni onto blank Si wafers. An alternative fabricationprocess based on the deposition and silicidation of a multilayerfilm is presented. The films were found to have lowresistivity and smooth surfaces, with the layered structure preserved evenafter silicidation. Textured piezoelectric films of (002) wurtzite AlN demonstrateda diffraction-peak width that narrows to 3.5° when deposited ona thick 10 pair NiSi film.
Place, publisher, year, edition, pages
The Electrochemical Society , 2009. Vol. 12, no 5, H182-H184 p.
acoustoelectric devices, aluminium compounds, electrodes, nickel alloys, piezoelectric thin films, resonators, silicon alloys, sputter deposition
Engineering and Technology
Research subject Engineering Science with specialization in Microsystems Technology
IdentifiersURN: urn:nbn:se:uu:diva-99095DOI: 10.1149/1.3093099ISI: 000264283100027OAI: oai:DiVA.org:uu-99095DiVA: diva2:202106