Oscillators Based on Monolithically Integrated AlN TFBARs
2008 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 56, no 12, 3209-3216 p.Article in journal (Refereed) Published
Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits. The oscillators operate at 2 GHz. Measurements of the oscillators reveal a lowest phase-noise of -125 dBc/Hz at 100 kHz offset.
Place, publisher, year, edition, pages
2008. Vol. 56, no 12, 3209-3216 p.
Acoustic resonator, hybrid integration, multichip module (MCM), oscillator, thin-film bulk acoustic resonator (TFBAR), thin-film device
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-100387DOI: 10.1109/TMTT.2008.2007091ISI: 000261895700025OAI: oai:DiVA.org:uu-100387DiVA: diva2:210212