Formation of Large Voids in the Amorphous Phase-Change Memory Ge2Sb2Te5 Alloy
2009 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 102, no 7, 075504- p.Article in journal (Refereed) Published
Onthe basis of ab initio molecular dynamics simulations, large voids mainlysurrounded by Te atoms are observed in molten and amorphousGe2Sb2Te5, which is due to the clustering of two- andthreefold coordinated Te atoms. Furthermore, pressure shows a significant effecton the clustering of the under coordinated Te atoms andhence the formation of large voids. The present results demonstratethat both vacancies and Te play an important role inthe fast reversible phase transition process.
Place, publisher, year, edition, pages
2009. Vol. 102, no 7, 075504- p.
IdentifiersURN: urn:nbn:se:uu:diva-100532DOI: 10.1103/PhysRevLett.102.075504ISI: 000263599500040PubMedID: 19257687OAI: oai:DiVA.org:uu-100532DiVA: diva2:210453