Improved Properties of AlON/4H-SiC Interface for Passivation Studies
2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 600-603, 763-766 p.Article in journal (Refereed) Published
Aluminium oxynitride (AlON) films of variable composition were grown by reactive sputter deposition in a N2/O2 ambient at room temperature and studied for device passivation. The films were deposited on Si and 4H-SiC substrates as well as on SiC PiN diodes. The AlON/SiO2/SiC stack provided superior interface properties compared to the AlON/SiC structure. Samples with 8% oxygen content, in the AlON film, and subjected to a UV exposure prior to deposition, exhibited the smallest net positive interface charge. A large net negative interface charge was observed for samples with 10% oxygen content and for the samples with 8% oxygen content and subjected to a RCA1 surface clean, prior to deposition. Diodes passivated with AlON films demonstrated reduced leakage current compared to as-processed diodes.
Place, publisher, year, edition, pages
Switzerland: Trans Tech Publications , 2009. Vol. 600-603, 763-766 p.
SiC, AlN, passivation, leakage currents
Engineering and Technology
Research subject Electronics
IdentifiersURN: urn:nbn:se:uu:diva-100955DOI: 10.4028/www.scientific.net/MSF.600-603.763OAI: oai:DiVA.org:uu-100955DiVA: diva2:211409