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The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Fasta tillståndets elektronik)
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 23, 233501- p.Article in journal (Refereed) Published
Abstract [en]

Hafnium aluminate thin films were synthesized by atomic layer deposition (ALD) to assess the effect of aluminum oxide incorporation on the dielectric/Ge interfacial properties. In these HfxAlyOz thin films, the Hf to Al cation ratio was effectively controlled by changing the ratio of hafnium oxide to aluminum oxide ALD cycles, while their short range order was changed upon increasing aluminum oxide incorporation, as observed by extended x-ray absorption fine structure analysis. The incorporation of aluminum oxide was shown to improve the   electrical characteristics of hafnium oxide/Ge devices, including lower interface state densities and leakage current densities.

Place, publisher, year, edition, pages
2008. Vol. 93, no 23, 233501- p.
Keyword [en]
aluminium compounds, atomic layer deposition, current density, dielectric thin films, elemental semiconductors, EXAFS, germanium, hafnium compounds, interface states, leakage currents, semiconductor-insulator boundaries
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-105880DOI: 10.1063/1.3040311ISI: 000261699700077OAI: oai:DiVA.org:uu-105880DiVA: diva2:222708
Available from: 2009-06-09 Created: 2009-06-09 Last updated: 2017-12-13Bibliographically approved

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Lu, JunBlom, Hans-Olof

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