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Photothermal CVD of Carbon Thin Films using CH2I2 as the Precursor
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
2008 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 14, no 9-10, 279-285 p.Article in journal (Refereed) Published
Abstract [en]

Thin carbon films are deposited via CVD from the precursor methylene iodide (CH2I2) using two different activation sources; a broadband IR lamp and a thermal plate. Large differences in deposition rates are observed when comparing the two sources of activation. The characteristics of the deposition kinetics of the highly sensitive system are also investigated by employing a split, symmetric reactor, and by using a qualitative model. Raman spectroscopy (RS) is used for microstructural characterization of the films. The lamp technique allows a simple and low-cost experimental setup, for deposition of disordered carbon thin films at relatively low temperatures and high rates.

Place, publisher, year, edition, pages
2008. Vol. 14, no 9-10, 279-285 p.
Keyword [en]
Carbon, Methylene iodide, IR lamp, Raman spectroscopy
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-107100DOI: 10.1002/cvde.200806666ISI: 000260705900002OAI: oai:DiVA.org:uu-107100DiVA: diva2:227665
Available from: 2009-07-16 Created: 2009-07-16 Last updated: 2017-12-13Bibliographically approved

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