Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films
2008 (English)In: Journal of Materials Chemistry, ISSN 0959-9428, E-ISSN 1364-5501, Vol. 18, no 28, 3385-3390 p.Article in journal (Refereed) Published
ZrO2 thin films were grown onto silicon (100) substrates by atomic layer deposition (ALD) using novel cyclopentadienyl-type precursors, namely (CpMe)(2)ZrMe2 and (CpMe)(2)Zr(OMe) Me (Cp = cyclopentadienyl, C5H5) together with ozone as the oxygen source. Growth characteristics were studied in the temperature range of 250 to 500 degrees C. An ALD-type self-limiting growth mode was verified for both processes at 350 degrees C where highly conformal films were deposited onto high aspect ratio trenches. Signs of thermal decomposition were not observed at or below 400 degrees C, a temperature considerably exceeding the thermal decomposition temperature of the Zr-alkylamides. Processing parameters were optimised at 350 degrees C, where deposition rates of 0.55 and 0.65 angstrom cycle(-1) were obtained for (CpMe)(2)ZrMe2/O-3 and (CpMe)(2)Zr(OMe)Me/O-3, respectively. The films grown from both precursors were stoichiometric and polycrystalline with an increasing contribution from the metastable cubic phase with decreasing film thickness. In the films grown from (CpMe)(2)ZrMe2, the breakdown field did not essentially depend on the film thickness, whereas in the films grown from (CpMe)(2)Zr(OMe)Me the structural homogeneity and breakdown field increased with decreasing film thickness. The films exhibited good capacitive properties that were characteristic of insulating oxides and did not essentially depend on the precursor chemistry.
Place, publisher, year, edition, pages
2008. Vol. 18, no 28, 3385-3390 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-109985DOI: 10.1039/b802523aISI: 000257509700016OAI: oai:DiVA.org:uu-109985DiVA: diva2:274958