CVD of Copper(I) Nitride
2009 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 15, no 10-12, 300-305 p.Article in journal (Refereed) Published
Copper(I) nitride (Cu3N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfaC)(2)), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO2 substrate. Films are deposited in the temperature range 250-550 degrees C. Single-phase Cu3N is obtained up to 400 degrees C. A phase mixture Of Cu3N and Cu is obtained at 425 degrees C, while a temperature of 550 degrees C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu3N has the cubic, anti-ReO3-type structure; with a cell parameter in the range 3.805-3.816 angstrom. X-ray photoelectron spectroscopy (XPS) verifies the Cu3N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.
Place, publisher, year, edition, pages
Weinheim: WILEY-VCH Verlag GmbH & Co , 2009. Vol. 15, no 10-12, 300-305 p.
Cu3N; Cu(hfac)(2); growth rate dependence; morphology
Research subject Inorganic Chemistry
IdentifiersURN: urn:nbn:se:uu:diva-110523DOI: 10.1002/cvde.200906794ISI: 000273412200008OAI: oai:DiVA.org:uu-110523DiVA: diva2:277185