Deposition and characterisation of Cu2O/Cu3N multilayers
(English)Manuscript (preprint) (Other academic)
Multilayers of Cu2O and Cu3N were successfully deposited by the CVD technique on SiO2 substrates. For deposition of the Cu3N layers Cu(hfac)2 and NH3 and for the Cu2O layers Cu(hfac)2 and H2O were used as precursors, respectively. The multilayers were deposited at 300 °C with different stacking sequences, starting with either the oxide or the nitride. In order to analyze and determine phase, texture, chemical composition and microstructure, the films were characterized by XRD, XPS and SEM. Results from GI-XRD measurements at different incidence angles show distinct Cu2O and Cu3N layers. No contaminations in the form of carbon or fluorine originating from the MO precursor were found by XPS technique. The XPS results also reveal that the Cu3N phase contained oxygen (for the Cu2O on top of Cu3N). The oxygen is expected to originate from exposure of the Cu3N surface to water vapour upon starting the Cu2O deposition. The cross section microstructure was studied by SEM. It was found that columnar growth occurred for both Cu2O/Cu3N and Cu3N/Cu2O/Cu3N films.
multilayers, CVD, chemical composition, morphology and microstructure
Research subject Inorganic Chemistry
IdentifiersURN: urn:nbn:se:uu:diva-110527OAI: oai:DiVA.org:uu-110527DiVA: diva2:277204