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Deposition and characterisation of Cu2O/Cu3N multilayers
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
(English)Manuscript (preprint) (Other academic)
Abstract [en]

Multilayers of Cu2O and Cu3N were successfully deposited by the CVD technique on SiO2 substrates. For deposition of the Cu3N layers Cu(hfac)2 and NH3 and for the Cu2O layers Cu(hfac)2 and H2O were used as precursors, respectively. The multilayers were deposited at 300 °C with different stacking sequences, starting with either the oxide or the nitride. In order to analyze and determine phase, texture, chemical composition and microstructure, the films were characterized by XRD, XPS and SEM. Results from GI-XRD measurements at different incidence angles show distinct Cu2O and Cu3N layers. No contaminations in the form of carbon or fluorine originating from the MO precursor were found by XPS technique. The XPS results also reveal that the Cu3N phase contained oxygen (for the Cu2O on top of Cu3N). The oxygen is expected to originate from exposure of the Cu3N surface to water vapour upon starting the Cu2O deposition. The cross section microstructure was studied by SEM. It was found that columnar growth occurred for both Cu2O/Cu3N and Cu3N/Cu2O/Cu3N films.

Keyword [en]
multilayers, CVD, chemical composition, morphology and microstructure
National Category
Inorganic Chemistry
Research subject
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-110527OAI: oai:DiVA.org:uu-110527DiVA: diva2:277204
Available from: 2009-11-16 Created: 2009-11-16 Last updated: 2009-11-17Bibliographically approved
In thesis
1. Chemical Vapour Deposition of Undoped and Oxygen Doped Copper (I) Nitride
Open this publication in new window or tab >>Chemical Vapour Deposition of Undoped and Oxygen Doped Copper (I) Nitride
2010 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In science and technology there is a steadily increased demand of new materials and new materials production processes since they create new application areas as well as improved production technology and economy. This thesis includes development and studies of a chemical vapour deposition (CVD) process for growth of thin films of the metastable material copper nitride, Cu3N, which is a semiconductor and decomposes at around 300 oC. The combination of these properties opens for a variety of applications ranging from solar cells to sensor and information technology.

The CVD process developed is based on a metal-organic compound copper hexafluoroacetylacetonate, Cu(hfac)2 , ammonia and water and was working at about 300 oC and  5 Torr. It was found that a small amount of water in the vapour increased the growth rate considerably and that the phase content, film texture, chemical composition and morphology were strongly dependent on the deposition conditions.

In-situ oxygen doping during the CVD of Cu3N to an amount of 9 atomic % could also be accomplished by increasing the water concentration in the vapour. Oxygen doping increases the band gap of the material as well as the electrical resistivity and changes the stability. The crystal structure of Cu3N is very open and contains several sites which can be used for doping. Different spectroscopic techniques like X-ray photoelectron spectroscopy, Raman spectroscopy and near edge X-ray absorption fine structure spectroscopy were used to identify the oxygen doping site(s) in Cu3N. Besides the properties, the oxygen doping also affected the morphology and texture of the films.

By combining thin layers of different materials several properties can be optimized at the same time. It has been demonstrated in this thesis that multilayers, composed of alternating Cu3N and Cu2O layers, i.e. a metastable and a stable material, could be grown by CVD technique. However, the stacking sequence affected the texture, morphology and chemical composition. The interfaces between the different layers were sharp and no signs of decomposition of the initially deposited metastable Cu3N layer could be detected.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2010. 52 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 691
Keyword
Chemical vapour deposition, copper hexafluoroacetylacetonate, copper (I) nitride, copper (I) oxide, multilayers, oxygen doping
National Category
Organic Chemistry
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-110533 (URN)978-91-554-7665-6 (ISBN)
Public defence
2010-01-08, Häggsalen, The Ångstöm Laboratory, Lägerhyddsvägen 1, Uppsala, 10:15 (English)
Opponent
Supervisors
Available from: 2009-12-09 Created: 2009-11-16 Last updated: 2009-12-09

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