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Adsorption-induced gap states of h-BN on metal surfaces
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
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2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 77, no 8, 085421- p.Article in journal (Refereed) Published
Abstract [en]

The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN/Ni(111), somewhat less for h-BN/Rh(111) and still less for h-BN/Pt(111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption.

Place, publisher, year, edition, pages
2008. Vol. 77, no 8, 085421- p.
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-110484DOI: 10.1103/PhysRevB.77.085421ISI: 000253764300104OAI: oai:DiVA.org:uu-110484DiVA: diva2:277231
Available from: 2009-11-16 Created: 2009-11-16 Last updated: 2009-11-16

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